Rochester Electronics / BSB280N15NZ3GXUMA1

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Type	Description
Series	OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	28mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1.6 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 57W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MG-WDSON-2, CanPAK M™
Package / Case	3-WDSON

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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