Rochester Electronics / AUIRF7640S2TR

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Type	Description
Series	HEXFET®
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	5.8A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	36mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2.4W (Ta), 30W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET SB
Package / Case	DirectFET™ Isometric SB

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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