Rochester Electronics / 2SK4065-E

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Type	Description
Series	-
Package	Bag
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	220 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	12200 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.65W (Ta), 90W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	SMP
Package / Case	TO-220-3, Short Tab

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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