STMicroelectronics / SCTW90N65G2V

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Type	Description
Series	-
Package	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3300 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	390W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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