Rochester Electronics / BSD214SNH6327XTSA1

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Type	Description
Series	OptiMOS™
Package	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	140mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 3.7µA
Gate Charge (Qg) (Max) @ Vgs	0.8 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	143 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	500mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT363-6
Package / Case	6-VSSOP, SC-88, SOT-363

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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