Rochester Electronics / SFT1350-H

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Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	19A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	59mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	590 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 23W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TP
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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