Rochester Electronics / NP82N04NDG-S18-AY

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Type	Description
Series	Automotive, AEC-Q101
Package	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	82A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	4.2mOhm @ 41A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 143W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	3-LDPAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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