IR (Infineon Technologies) / IPB80N06S4L05ATMA2

Manufacturer Part Number: IPB80N06S4L05ATMA2
Manufacturer: IR (Infineon Technologies)
Part of Description: MOSFET N-CH 60V 80A TO263-3
Lead Free Status / RoHS Status: Lead Free / RoHS Compliant
Stock Condition: 1418 In Stock
Ship From: Hong Kong
Shipment Way: DHL/Fedex/TNT/UPS/EMS
REMARK
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Specification

TypeDescription
SeriesAutomotive, AEC-Q101, OptiMOS™
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 60µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds8180 pF @ 25 V
FET Feature-
Power Dissipation (Max)107W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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