Rochester Electronics / 3LN01C-TB-H

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REMARK: Buy the 3LN01C-TB-H Rochester Electronics on xunyun-ic.com, we are Rochester Electronics Corporation distributor,we sales new&original and offer 24 hours service,180 days warranty date, send the 3LN01C-TB-H within 24 hours,please contact our sales team or send email to zimin@xinyunic.com Hope we can cooperate in the future.

Type	Description
Series	-
Package	Bulk
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Rds On (Max) @ Id, Vgs	3.7Ohm @ 80mA, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	1.58 nC @ 10 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	7 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	250mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	3-CP
Package / Case	TO-236-3, SC-59, SOT-23-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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