IR (Infineon Technologies) / IGT60R190D1SATMA1

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Type	Description
Series	CoolGaN™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	55.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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