NXP Semiconductors / 2N5551,412

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Type	Description
Series	-
Package	Tube
Part Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	300 mA
Voltage - Collector Emitter Breakdown (Max)	160 V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)	50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Power - Max	630 mW
Frequency - Transition	300MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

All the Eelctronics Components will be packing in very safely by ESD antistatic protection.

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